Samsung starts cranking out 512GB eUFS storage

The company yet has to confirm whether it will use the new storage solution for the Galaxy S9, but it is possible that the upcoming flagship smartphone from Samsung could have a 512 GB option.

Jaesoo Han, Executive Vice President of Memory Sales and Marketing at Samsung Electronics says the following about company's vision in paving the way for mobile phones to exhibit higher levels of internal storage.

"By assuring an early, stable supply of this advanced embedded storage, Samsung is taking a big step forward in contributing to timely launches of next-generation mobile devices by mobile manufacturers around the world".

The 64-layer 512Gb V-NAND's advanced circuit design and new power management technology will potentially help the Galaxy S9 to exhibit better battery life. When it comes to random operations, Samsung's 512 GB eUFS offers up to 42,000/40,000 read/write IOPS, similar to the predecessors featuring 48-layer 256 Gb V-NAND ICs. Simply put, Samsung's new storage solution is able to stay power efficient even though it contains twice the number of cells compared to a 256GB eUFS.

The new solution is also really fast, allowing users to "store approximately 130 [10 minute] 4K Ultra HD video clips", a feat that might make the experience very sluggish on current storage solutions.


On a side note, Samsung also announced plans to increase production of its 64-layer 512 Gb V-NAND chips as well as 256 Gb V-NAND chips to meet growing demand for mobile storage, SSDs and other products.

Would you still be interested in picking up the Galaxy S9 if it shipped with 500GB of internal flash storage instead of a microSD slot? No precise timeline of when these chips can be expected in mobile devices has been disclosed, beyond it being meant for upcoming flagship smartphones and tablets.

The new solution will provide a huge boost for storage on flagship phones, as well as another product for the strong performing division of Samsung to continue growth.

To maximize the performance and energy efficiency of the new 512GB eUFS, Samsung has introduced a new set of proprietary technologies. With the 512GB eUFS, sequential read and writes reach up to 860 MB/s and 255 MB/s, respectively- over eight times faster than a typical microSD card.


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